Invention Grant
- Patent Title: Structure and method to improve current-carrying capabilities of C4 joints
- Patent Title (中): 提高C4接头承载能力的结构和方法
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Application No.: US11308396Application Date: 2006-03-21
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Publication No.: US08367543B2Publication Date: 2013-02-05
- Inventor: Mukta Ghate Farooq , Jasvir Singh Jaspal , William Francis Landers , Thomas E. Lombardi , Hai Pham Longworth , H. Bernhard Pogge , Roger A. Quon
- Applicant: Mukta Ghate Farooq , Jasvir Singh Jaspal , William Francis Landers , Thomas E. Lombardi , Hai Pham Longworth , H. Bernhard Pogge , Roger A. Quon
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Matthew Zehrer
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A system and method comprises depositing a dielectric layer on a substrate and depositing a metal layer on the dielectric layer. The system and method further includes depositing a high temperature diffusion barrier metal cap on the metal layer. The system and method further includes depositing a second dielectric layer on the high temperature diffusion barrier metal cap and the first dielectric layer, and etching a via into the second dielectric layer, such that the high temperature diffusion barrier metal cap is exposed. The system and method further includes depositing an under bump metallurgy in the via, and forming a C4 ball on the under bump metallurgy layer.
Public/Granted literature
- US20070222073A1 STRUCTURE AND METHOD TO IMPROVE CURRENT-CARRYING CAPABILITIES OF C4 JOINTS Public/Granted day:2007-09-27
Information query
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