Invention Grant
- Patent Title: System and method for monitoring copper barrier layer preclean process
- Patent Title (中): 铜屏障层预清洗工艺监测系统及方法
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Application No.: US13115563Application Date: 2011-05-25
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Publication No.: US08367545B2Publication Date: 2013-02-05
- Inventor: Kuo-Liang Sung , Cheng-Hui Weng
- Applicant: Kuo-Liang Sung , Cheng-Hui Weng
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/00 ; H01L21/38 ; H01L21/768
Abstract:
A monitor wafer for use in monitoring a preclean process and method of making same are described. One embodiment is a monitor wafer comprising a silicon base layer; a capping layer disposed on the silicon base layer; and a barrier layer disposed on the USG layer. The monitor wafer further comprises a copper (“Cu”) seed layer disposed on the barrier layer; and a thick Cu layer disposed on the Cu seed layer.
Public/Granted literature
- US20120299184A1 SYSTEM AND METHOD FOR MONITORING COPPER BARRIER LAYER PRECLEAN PROCESS Public/Granted day:2012-11-29
Information query
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