Invention Grant
- Patent Title: Method for uniform nanoscale film deposition
- Patent Title (中): 均匀纳米级膜沉积的方法
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Application No.: US12404890Application Date: 2009-03-16
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Publication No.: US08367562B2Publication Date: 2013-02-05
- Inventor: Errol T. Ryan
- Applicant: Errol T. Ryan
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries Inc.
- Current Assignee: Globalfoundries Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong Mori & Steiner, P.C.
- Main IPC: H01L21/469
- IPC: H01L21/469

Abstract:
Ultrathin layers are deposited by chemical vapor deposition (CVD) with reduced discontinuities, such as pinholes. Embodiments include depositing a material on a wafer by CVD while rotating the CVD showerhead and/or the wafer mounting surface, e.g., at least 45°. Embodiments include rotating the showerhead and/or mounting surface continuously through the deposition of the material. Embodiments also include forming subfilms of the material and rotating the showerhead and/or mounting surface after the deposition of each subfilm. The rotation of the showerhead and/or mounting surface averages out the non-uniformities introduced by the CVD showerhead, thereby eliminating discontinuities and improving within wafer and wafer-to-wafer uniformity.
Public/Granted literature
- US20100233879A1 METHOD FOR UNIFORM NANOSCALE FILM DEPOSITION Public/Granted day:2010-09-16
Information query
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