Invention Grant
US08367717B2 High performance solution processable semiconductor based on dithieno [2,3-D:2′, 3′-D′]benzo[1,2-B:4,5-B′] dithiophene
有权
基于二噻吩[2,3-D:2',3'-D']苯并[1,2-B:4,5-B']二噻吩的高性能溶液可加工半导体
- Patent Title: High performance solution processable semiconductor based on dithieno [2,3-D:2′, 3′-D′]benzo[1,2-B:4,5-B′] dithiophene
- Patent Title (中): 基于二噻吩[2,3-D:2',3'-D']苯并[1,2-B:4,5-B']二噻吩的高性能溶液可加工半导体
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Application No.: US13002208Application Date: 2009-06-25
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Publication No.: US08367717B2Publication Date: 2013-02-05
- Inventor: Marcel Kastler , Silke Koehler , Klaus Muellen , Peng Gao , Dirk Beckmann , Xinliang Feng , Hoi Nok Tsao
- Applicant: Marcel Kastler , Silke Koehler , Klaus Muellen , Peng Gao , Dirk Beckmann , Xinliang Feng , Hoi Nok Tsao
- Applicant Address: DE Ludwigshafen DE Munich
- Assignee: BASF SE,Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Current Assignee: BASF SE,Max-Planck-Gesellschaft zur Foerderung der Wissenschaften e.V.
- Current Assignee Address: DE Ludwigshafen DE Munich
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: EP08159525 20080702
- International Application: PCT/EP2009/057985 WO 20090625
- International Announcement: WO2010/000670 WO 20100107
- Main IPC: A61K31/38
- IPC: A61K31/38 ; C07D333/50
![High performance solution processable semiconductor based on dithieno [2,3-D:2′, 3′-D′]benzo[1,2-B:4,5-B′] dithiophene](/abs-image/US/2013/02/05/US08367717B2/abs.jpg.150x150.jpg)
Abstract:
Dithienobenzodithiophenes of general formula (I) in which R1 to R6 are each independently selected from a) H, b) halogen, c) —CN, d) —NO2, e) —OH, f) a C1-20 alkyl group, g) a C2-20 alkenyl group, h) a C2-20 alkynyl group, i) a C1-20 alkoxy group, j) a C1-20 alkylthio group, k) a C1-20 haloalkyl group, I) a —Y—C3-10 cycloalkyl group, m) a —Y—C6-14 aryl group, n) a —Y-3-12 membered cyclo-heteroalkyl group, or o) a —Y-5-14 membered heteroaryl group, wherein each of the C1-20 alkyl group, the C2-20 alkenyl group, the C2-20 alkynyl group, the C3-10 cycloalkyl group, the C6-14 aryl group, the 3-12 membered cyc-loheteroalkyl group, and the 5-14 membered heteroaryl group is optionally substituted with 1-4 R7 groups, wherein R1 and R3 and R2 and R4 may also together form an aliphatic cyclic moiety, Y is independently selected from divalent a C1-6 alkyl group, a divalent C1-6 haloalkyl group, or a covalent bond; and m is independently selected from 0, 1, or 2. The invention also relates to the use of the dithienobenzodithiophenes according to any of claims 1 to 4 as semiconductors or charge transport materials, as thin-film transistors (TFTs), or in semiconductor components for organic light-emitting diodes (OLEDs), for photovoltaic components or in sensors, as an electrode material in batteries, as optical waveguides or for electrophotography applications.
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