Invention Grant
- Patent Title: Nanostructured layers, methods of making nanostructured layers, and application thereof
- Patent Title (中): 纳米结构层，制备纳米结构层的方法及其应用
-
Application No.: US12826860Application Date: 2010-06-30
-
Publication No.: US08368048B2Publication Date: 2013-02-05
- Inventor: Michael LoCascio , San Ming Yang
- Applicant: Michael LoCascio , San Ming Yang
- Applicant Address: GB
- Assignee: Nanoco Technologies, Ltd.
- Current Assignee: Nanoco Technologies, Ltd.
- Current Assignee Address: GB
- Agency: Wong, Cabello, Lutsch, Rutherford & Brucculeri
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
One embodiment of the invention provides a nanostructure layer, comprising: a first population of semiconductor nanocrystals forming electron transport conduits; a second population of semiconductor nanocrystals forming hole transport conduits; and a third population of semiconductor nanocrystals capable of at least one of the following: absorbing light or emitting light.
Public/Granted literature
- US20100270511A1 NANOSTRUCTURED LAYERS, METHODS OF MAKING NANOSTRUCTURED LAYERS, AND APPLICATION THEREOF Public/Granted day:2010-10-28
Information query
IPC分类:
