Invention Grant
- Patent Title: Contact structure and semiconductor device
- Patent Title (中): 接触结构和半导体器件
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Application No.: US13462957Application Date: 2012-05-03
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Publication No.: US08368076B2Publication Date: 2013-02-05
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP11-207041 19990722
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/10 ; H01L31/00
Abstract:
To improve the reliability of contact with an anisotropic conductive film in a semiconductor device such as a liquid crystal display panel, a terminal portion of a connecting wiring on an active matrix substrate is electrically connected to an FPC by an anisotropic conductive film. The connecting wiring is made of a lamination film of a metallic film and a transparent conductive film. In the connecting portion with the anisotropic conductive film, a side surface of the connecting wiring is covered with a protecting film made of an insulating material, thereby exposure to air of the metallic film can be avoided.
Public/Granted literature
- US20120268670A1 CONTACT STRUCTURE AND SEMICONDUCTOR DEVICE Public/Granted day:2012-10-25
Information query
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