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US08368103B2 Compound semiconductor light-emitting element and method of manufacturing the same, conductive translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus 有权
化合物半导体发光元件及其制造方法，用于化合物半导体发光元件的导电性透光性电极，灯，电子器件，机械装置

  • Patent Title: Compound semiconductor light-emitting element and method of manufacturing the same, conductive translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus
  • Patent Title (中): 化合物半导体发光元件及其制造方法，用于化合物半导体发光元件的导电性透光性电极，灯，电子器件，机械装置
  • Application No.: US12864440
    Application Date: 2009-01-23
  • Publication No.: US08368103B2
    Publication Date: 2013-02-05
  • Inventor: Hironao Shinohara , Naoki Fukunaga , Yasunori Yokoyama
  • Applicant: Hironao Shinohara , Naoki Fukunaga , Yasunori Yokoyama
  • Applicant Address: JP Tokyo
  • Assignee: Showa Denko K.K.
  • Current Assignee: Showa Denko K.K.
  • Current Assignee Address: JP Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2008-014232 20080124; JP2008-068076 20080317; JP2008-273092 20081023
  • International Application: PCT/JP2009/051062 WO 20090123
  • International Announcement: WO2009/093683 WO 20090730
  • Main IPC: H01L33/00
  • IPC: H01L33/00
Compound semiconductor light-emitting element and method of manufacturing the same, conductive translucent electrode for compound semiconductor light-emitting element, lamp, electronic device, and mechanical apparatus
Abstract:
The invention provides a compound semiconductor light-emitting element including: a substrate on which an n-type semiconductor layer (12), a light-emitting layer (13), and a p-type semiconductor layer (14) that are made of a compound semiconductor are stacked in this order; a positive electrode (15) made of a conductive translucent electrode; and a negative electrode (17) made of a conductive electrode, wherein the conductive translucent electrode of the positive electrode (15) is a transparent conductive film containing crystals composed of In2O3 having a hexagonal crystal structure.
Abstract(Chinese):

本发明提供一种化合物半导体发光元件，包括：基板，其上形成有由n型半导体层（12），发光层（13）和p型半导体层（14）构成的基板 化合物半导体按顺序堆叠; 由导电性透光性电极构成的正极（15） 和由导电电极制成的负极（17），其中正极（15）的导电性透光电极是含有由具有六方晶体结构的In 2 O 3构成的晶体的透明导电膜。

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