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US08368130B2 Method and device to reduce dark current in image sensors 有权
降低图像传感器暗电流的方法和装置

Method and device to reduce dark current in image sensors
Abstract:
A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. The step of forming the first transistor in the pixel area and the second transistor in the logic area includes performing a first implant process in the pixel area and the logic area, performing a second implant process in the pixel area and the logic area, and performing a third implant process only in the logic area.
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