Invention Grant
- Patent Title: Ferroelectric memory and manufacturing method thereof
- Patent Title (中): 铁电存储器及其制造方法
-
Application No.: US12873720Application Date: 2010-09-01
-
Publication No.: US08368132B2Publication Date: 2013-02-05
- Inventor: Kouichi Nagai
- Applicant: Kouichi Nagai
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/00 ; H01L21/8242
Abstract:
Provided is a ferroelectric memory including a silicon substrate, a transistor formed on the silicon substrate, and a ferroelectric capacitor formed above the transistor. The ferroelectric capacitor includes a lower electrode, a ferroelectric film formed on the lower electrode, an upper electrode formed on the ferroelectric film, and a metal film formed on the upper electrode.
Public/Granted literature
Information query
IPC分类:
