Invention Grant
- Patent Title: Semiconductor device comprising transistor structures and methods for forming same
- Patent Title (中): 包括晶体管结构的半导体器件及其形成方法
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Application No.: US13312801Application Date: 2011-12-06
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Publication No.: US08368139B2Publication Date: 2013-02-05
- Inventor: Venkatesan Ananthan
- Applicant: Venkatesan Ananthan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A method for forming an opening within a semiconductor material comprises forming a neck portion, a rounded portion below the neck portion and, in some embodiments, a protruding portion below the rounded portion. This opening may be filled with a conductor, a dielectric, or both. Embodiments to form a transistor gate, shallow trench isolation, and an isolation material separating a transistor source and drain are disclosed. Device structures formed by the method are also described.
Public/Granted literature
- US20120112272A1 Semiconductor Device Comprising Transistor Structures and Methods for Forming Same Public/Granted day:2012-05-10
Information query
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