Invention Grant
- Patent Title: FinFET devices
- Patent Title (中): FinFET器件
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Application No.: US12815845Application Date: 2010-06-15
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Publication No.: US08368146B2Publication Date: 2013-02-05
- Inventor: Veeraraghavan S. Basker , David V. Horak , Hemanth Jagannathan , Charles W. Koburger, III
- Applicant: Veeraraghavan S. Basker , David V. Horak , Hemanth Jagannathan , Charles W. Koburger, III
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Safran & Cole, P.C.
- Agent Joseph Abate; Roberts Mlotkowski
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
A finFET structure and method of manufacture such structure is provided with lowered Ceff and enhanced stress. The finFET structure includes a plurality of finFET structures and a stress material forming part of a gate stack and in a space between adjacent ones of the plurality of finFET structures.
Public/Granted literature
- US20110303983A1 FINFET DEVICES AND METHODS OF MANUFACTURE Public/Granted day:2011-12-15
Information query
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