Invention Grant
US08368155B2 Systems and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same
有权
使用激光辅助化学蚀刻制备独立膜的系统和方法,以及使用其形成的独立膜
- Patent Title: Systems and methods for preparing freestanding films using laser-assisted chemical etch, and freestanding films formed using same
- Patent Title (中): 使用激光辅助化学蚀刻制备独立膜的系统和方法,以及使用其形成的独立膜
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Application No.: US12869597Application Date: 2010-08-26
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Publication No.: US08368155B2Publication Date: 2013-02-05
- Inventor: Margaret H. Abraham , David P. Taylor
- Applicant: Margaret H. Abraham , David P. Taylor
- Applicant Address: US CA El Segundo
- Assignee: The Aerospace Corporation
- Current Assignee: The Aerospace Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Jones Day
- Agent Nicola A. Pisano; Jaime D. Choi
- Main IPC: H01L23/20
- IPC: H01L23/20

Abstract:
Systems and methods for preparing freestanding films using laser-assisted chemical etch (LACE), and freestanding films formed using same, are provided. In accordance with one aspect a substrate has a surface and a portion defining an isotropically defined cavity; and a substantially continuous film is disposed at the substrate surface and spans the isotropically defined cavity. In accordance with another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a film is disposed at the substrate surface and spans the isotropically defined cavity, the film including at least one of hafnium oxide (HfO2), diamond-like carbon, graphene, and silicon carbide (SiC) of a predetermined phase. In accordance with still another aspect, a substrate has a surface and a portion defining an isotropically defined cavity; and a multi-layer film is disposed at the substrate surface and spans the isotropically defined cavity.
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