The embodiments of the present invention disclose a semiconductor device and a method for forming the semiconductor device. Wherein the semiconductor comprises: a first semiconductor layer, having a first conductivity type on a semiconductor substrate, a guard ring region, formed in the surface of the first semiconductor layer, having a second conductivity type; a Schottky diode metal contact, coupled to the first semiconductor layer, wherein the guard ring region is at periphery of the Schottky diode interface, and wherein the Schottky diode metal contact has no direct electrical connection with the guard ring region; and an electrical resistance module, coupled between the Schottky diode metal contact and the guard ring. Due to the ballasting effect from the electrical resistance module, the minority injection or the parasitic transistor action are alleviated. Thus, forward current capability is extended without introducing significant minority injection.