Invention Grant
US08368171B2 Methods of forming electromigration and thermal gradient based fuse structures
有权
形成电迁移和基于热梯度的熔丝结构的方法
- Patent Title: Methods of forming electromigration and thermal gradient based fuse structures
- Patent Title (中): 形成电迁移和基于热梯度的熔丝结构的方法
-
Application No.: US11605119Application Date: 2006-11-27
-
Publication No.: US08368171B2Publication Date: 2013-02-05
- Inventor: Jose A. Maiz , Jun He , Mark Bohr
- Applicant: Jose A. Maiz , Jun He , Mark Bohr
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Forefront IP Lawgroup, PLLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L29/40
Abstract:
Methods of forming a microelectronic structure are described. Embodiments of those methods include forming a metallic fuse structure by forming at least one via on a first interconnect structure, lining the at least one via with a barrier layer, and then forming a second interconnect structure on the at least one via.
Public/Granted literature
- US20070069331A1 Methods of forming electromigration and thermal gradient based fuse structures Public/Granted day:2007-03-29
Information query
IPC分类:
