Invention Grant
- Patent Title: Integrated circuit with ESD structure
- Patent Title (中): 集成电路采用ESD结构
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Application No.: US12905156Application Date: 2010-10-15
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Publication No.: US08368177B2Publication Date: 2013-02-05
- Inventor: Andreas Peter Meiser , Gerhard Prechtl , Nils Jensen
- Applicant: Andreas Peter Meiser , Gerhard Prechtl , Nils Jensen
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102009049671 20091016
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/66 ; H01L29/00 ; H01L21/20

Abstract:
An integrated circuit includes a semiconductor body of a first conductivity type. The semiconductor body includes a first semiconductor zone of a second conductivity type opposite the first conductivity type. The first semiconductor zone extends to a surface of the semiconductor body. A second semiconductor zone of the first conductivity type is embedded in the first semiconductor zone and extends as far as the surface. A third semiconductor zone of the second conductivity type at least partly projects from the first semiconductor zone along a lateral direction running parallel to the surface. A contact structure provides an electrical contact with the first and second semiconductor zones at the surface. The second semiconductor zone is arranged, along the lateral direction, between the part of the third semiconductor zone which projects from the first semiconductor zone and a part of the contact structure in contact with the first semiconductor zone.
Public/Granted literature
- US20110089532A1 INTEGRATED CIRCUIT WITH ESD STRUCTURE Public/Granted day:2011-04-21
Information query
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