Invention Grant
- Patent Title: Phase change memory apparatus and fabrication method thereof
- Patent Title (中): 相变存储装置及其制造方法
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Application No.: US12647600Application Date: 2009-12-28
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Publication No.: US08368178B2Publication Date: 2013-02-05
- Inventor: Jang Uk Lee
- Applicant: Jang Uk Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2009-0058088 20090629
- Main IPC: H01L23/58
- IPC: H01L23/58
Abstract:
A phase change memory apparatus is provided that includes a first electrode that is longer than it is wide, the first electrode having a trench formed on an active region of a semiconductor substrate, a second electrode formed in a bottom portion of the trench, and a bottom electrode contact formed on the second electrode.
Public/Granted literature
- US20100327252A1 PHASE CHANGE MEMORY APPARATUS AND FABRICATION METHOD THEREOF Public/Granted day:2010-12-30
Information query
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