Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12883378Application Date: 2010-09-16
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Publication No.: US08368209B2Publication Date: 2013-02-05
- Inventor: Takahiro Tuji , Koichiro Kamata
- Applicant: Takahiro Tuji , Koichiro Kamata
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2009-215537 20090917
- Main IPC: H01L23/34
- IPC: H01L23/34

Abstract:
The problem of damage on an antenna or a circuit (electrostatic breakdown) due to discharge of electric charge accumulated in an insulator is solved; and the problem of NAKANUKE failure is solved. A pair of conductive layers, a pair of insulators provided between the pair of conductive layers, and a chip which is provided between the pair of insulators and includes an antenna, an analog circuit, and a digital circuit are provided, in which an opening is provided for at least one of the pair of conductive layers, and the opening is provided at a position which overlaps at least the analog circuit.
Public/Granted literature
- US20110063803A1 Semiconductor Device Public/Granted day:2011-03-17
Information query
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