Invention Grant
US08368222B2 Semiconductor device with pad with less diffusible contacting surface and method for production of the semiconductor device
有权
具有较小扩散接触表面的焊盘的半导体器件和用于制造半导体器件的方法
- Patent Title: Semiconductor device with pad with less diffusible contacting surface and method for production of the semiconductor device
- Patent Title (中): 具有较小扩散接触表面的焊盘的半导体器件和用于制造半导体器件的方法
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Application No.: US12858052Application Date: 2010-08-17
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Publication No.: US08368222B2Publication Date: 2013-02-05
- Inventor: Atsushi Okuyama
- Applicant: Atsushi Okuyama
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: SNR Denton US LLP
- Priority: JP2009-193324 20090824
- Main IPC: H01L23/522
- IPC: H01L23/522
Abstract:
A semiconductor device with a connection pad in a substrate, the connection pad having an exposed surface made of a metallic material that diffuses less readily into a dielectric layer than does a metal of a wiring layer connected thereto.
Public/Granted literature
- US20110042814A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE Public/Granted day:2011-02-24
Information query
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