Invention Grant
- Patent Title: Semiconductor device, production method for the same, and substrate
- Patent Title (中): 半导体装置及其制造方法以及基板
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Application No.: US12929425Application Date: 2011-01-24
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Publication No.: US08368234B2Publication Date: 2013-02-05
- Inventor: Motoharu Haga , Yasumasa Kasuya , Hiroaki Matsubara
- Applicant: Motoharu Haga , Yasumasa Kasuya , Hiroaki Matsubara
- Applicant Address: JP Kyoto
- Assignee: Rohm Co., Ltd.
- Current Assignee: Rohm Co., Ltd.
- Current Assignee Address: JP Kyoto
- Agency: Rabin & Berdo, P.C.
- Priority: JP2005-240285 20050822
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
A semiconductor device is provided in which a semiconductor chip is bonded to a substrate with a sufficiently increased bonding strength and cracking is assuredly prevented which may otherwise occur due to heat shock, heat cycle and the like. The semiconductor device includes a semiconductor chip and a substrate having a bonding area to which the semiconductor chip is bonded via a metal layer. The metal layer includes an Au—Sn—Ni alloy layer and a solder layer provided on the Au—Sn—Ni alloy layer. Undulations are formed in an interface between the Au—Sn—Ni alloy layer and the solder layer.
Public/Granted literature
- US20110115089A1 Semiconductor device, production method for the same, and substrate Public/Granted day:2011-05-19
Information query
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