Invention Grant
- Patent Title: Reduction of semiconductor stresses
- Patent Title (中): 减少半导体应力
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Application No.: US12208593Application Date: 2008-09-11
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Publication No.: US08368384B2Publication Date: 2013-02-05
- Inventor: Kjell Ingman , Kari Tikkanen , Tomi Väisälä , Kai Johansson
- Applicant: Kjell Ingman , Kari Tikkanen , Tomi Väisälä , Kai Johansson
- Applicant Address: FI Helsinki
- Assignee: ABB OY
- Current Assignee: ABB OY
- Current Assignee Address: FI Helsinki
- Agency: Buchanan Ingersoll & Rooney, P.C.
- Main IPC: G01R1/44
- IPC: G01R1/44

Abstract:
A method of reducing thermal stresses of a semiconductor component in a frequency converter, an arrangement in a frequency converter, and a frequency converter, wherein the semiconductor component is attached to a cooling element for cooling the semiconductor component and one or more resistive elements are attached to the cooling element. In the method, the cooling element is heated by the one or more resistive elements attached thereto by supplying current from the frequency converter through the one or more resistive elements for obtaining an elevated lowest temperature for the semiconductor component and thereby reducing the amount of temperature change between the highest and the lowest temperatures in the semiconductor component during use of the frequency converter.
Public/Granted literature
- US20100060328A1 REDUCTION OF SEMICONDUCTOR STRESSES Public/Granted day:2010-03-11
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