Invention Grant
US08368390B2 Vertical hall sensor and method for manufacturing a vertical hall sensor
有权
立式霍尔传感器及制造垂直霍尔传感器的方法
- Patent Title: Vertical hall sensor and method for manufacturing a vertical hall sensor
- Patent Title (中): 立式霍尔传感器及制造垂直霍尔传感器的方法
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Application No.: US12869651Application Date: 2010-08-26
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Publication No.: US08368390B2Publication Date: 2013-02-05
- Inventor: Martin Schrems , Sara Carniello
- Applicant: Martin Schrems , Sara Carniello
- Applicant Address: AT Unterpremstatten
- Assignee: Austriamicrosystems AG
- Current Assignee: Austriamicrosystems AG
- Current Assignee Address: AT Unterpremstatten
- Agency: Cozen O'Connor
- Priority: DE102009038938 20090826
- Main IPC: G01B7/14
- IPC: G01B7/14
Abstract:
A well (2) doped for a conductivity type and provided as the sensor region is formed in a substrate (1) made of semiconductor material. Contact regions (4), arranged spaced apart from one another and doped for the same conductivity type as the well (2), are formed in a cover layer (3) that delimits the region with the conductivity type of the well. The contact areas (4) are electroconductively connected to the well (2) and provided for terminal contacts (6).
Public/Granted literature
- US20110050210A1 Vertical Hall Sensor and Method for Manufacturing a Vertical Hall Sensor Public/Granted day:2011-03-03
Information query
