Invention Grant
- Patent Title: Delay lock loop circuit
- Patent Title (中): 延时锁回路电路
-
Application No.: US13217293Application Date: 2011-08-25
-
Publication No.: US08368447B1Publication Date: 2013-02-05
- Inventor: Min-Chung Chou
- Applicant: Min-Chung Chou
- Applicant Address: TW Hsinchu
- Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee: Elite Semiconductor Memory Technology Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Main IPC: H03L7/06
- IPC: H03L7/06

Abstract:
The invention provides a delay lock loop circuit (DLL) for generating a locked signal, the DLL circuit includes: a phase detector, a first and a second voltage controlled delay chains, a charge pump and a duty cycle detection pump. The phase detector generates a phase detecting result by detecting a phase difference between the clock signal and the locked signal. The first and the second voltage controlled delay chains generate a first and a second delayed signals by delaying the clock signal according to the first and the second control signals, respectively. The charge pump is used for generating the first and the second control signal according to the phase detecting result. The duty cycle detection pump is used for controlling a voltage level of the second control signal according to the first and the second delayed signals.
Public/Granted literature
- US20130049830A1 DELAY LOCK LOOP CIRCUIT Public/Granted day:2013-02-28
Information query