Invention Grant
- Patent Title: Voltage distribution for controlling CMOS RF switch
- Patent Title (中): 控制CMOS射频开关的电压分配
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Application No.: US12844640Application Date: 2010-07-27
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Publication No.: US08368463B2Publication Date: 2013-02-05
- Inventor: David K. Homol , Ryan M. Pratt , Hua Wang
- Applicant: David K. Homol , Ryan M. Pratt , Hua Wang
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe, Martens, Olson and Bear, LLP
- Main IPC: H03F1/14
- IPC: H03F1/14

Abstract:
Disclosed are voltage distribution device and method for controlling CMOS-based devices for switching radio frequency (RF) signals. In certain RF devices such as mobile phones, providing different amplification modes can yield performance advantages. For example, a capability to transmit at low and high power modes typically results in an extended battery life, since the high power mode can be activated only when needed. Switching between such amplification modes can be facilitated by one or more switches formed in an integrated circuit and configured to route RF signal to different amplification paths. In certain embodiments, such RF switches can be formed as CMOS devices, and can be based on triple-well structures. In certain embodiments, various bias voltages applied to such a CMOS RF switch can be facilitated by a voltage distribution component.
Public/Granted literature
- US20110298537A1 VOLTAGE DISTRIBUTION FOR CONTROLLING CMOS RF SWITCH Public/Granted day:2011-12-08
Information query
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