Invention Grant
- Patent Title: Silicon-on-insulator high power amplifiers
- Patent Title (中): 绝缘体上的绝缘体大功率放大器
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Application No.: US13044989Application Date: 2011-03-10
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Publication No.: US08368469B2Publication Date: 2013-02-05
- Inventor: Saeed Mohammadi , Sultan R. Helmi , Jing-Hwa Chen , Andrew J. Robison
- Applicant: Saeed Mohammadi , Sultan R. Helmi , Jing-Hwa Chen , Andrew J. Robison
- Applicant Address: US IN West Lafayette
- Assignee: Purdue Research Foundation
- Current Assignee: Purdue Research Foundation
- Current Assignee Address: US IN West Lafayette
- Agency: Barnes & Thornburg LLP
- Main IPC: H03F3/16
- IPC: H03F3/16

Abstract:
Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.
Public/Granted literature
- US20110227648A1 Silicon-on-Insulator High Power Amplifiers Public/Granted day:2011-09-22
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