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US08368469B2 Silicon-on-insulator high power amplifiers 有权
绝缘体上的绝缘体大功率放大器

Silicon-on-insulator high power amplifiers
Abstract:
Illustrative embodiments of a power amplifier are disclosed which include a plurality of amplifier cells, each having an input and an output. The plurality of amplifier cells are formed on a semiconductor substrate such that the outputs of the plurality of amplifier cells are electrically coupled in series. Each of the plurality of amplifier cells may comprise a first transistor that is electrically insulated from the semiconductor substrate and a first feedback resistor configured to dynamically bias the first transistor.
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