Invention Grant
US08368491B2 Systems and methods for providing high-capacitance RF MEMS switches
有权
用于提供高电容RF MEMS开关的系统和方法
- Patent Title: Systems and methods for providing high-capacitance RF MEMS switches
- Patent Title (中): 用于提供高电容RF MEMS开关的系统和方法
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Application No.: US12765512Application Date: 2010-04-22
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Publication No.: US08368491B2Publication Date: 2013-02-05
- Inventor: Brandon W. Pillans , Francis J. Morris , Mikel J. White
- Applicant: Brandon W. Pillans , Francis J. Morris , Mikel J. White
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Christie, Parker & Hale, LLP
- Main IPC: H01H51/22
- IPC: H01H51/22

Abstract:
Systems and methods for providing high-capacitive RF MEMS switches are provided. In one embodiment, the invention relates to a micro-electro-mechanical switch assembly including a substrate, an electrode disposed on a portion of the substrate, a dielectric layer disposed on at least a portion of the electrode, a metal layer disposed on at least a portion of the dielectric layer, and a flexible membrane having first and second ends supported at spaced locations on the substrate base, where the flexible membrane is configured to move from a default position to an actuated position in response to a preselected switching voltage applied between the flexible membrane and the electrode, and where, in the actuated position, the flexible membrane is in electrical contact with the metal layer.
Public/Granted literature
- US20110259717A1 SYSTEMS AND METHODS FOR PROVIDING HIGH-CAPACITANCE RF MEMS SWITCHES Public/Granted day:2011-10-27
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