Invention Grant
US08369126B2 Memory device, manufacturing method for memory device and method for data writing
失效
存储器件，存储器件的制造方法和数据写入方法
- Patent Title: Memory device, manufacturing method for memory device and method for data writing
- Patent Title (中): 存储器件，存储器件的制造方法和数据写入方法
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Application No.: US12959298Application Date: 2010-12-02
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Publication No.: US08369126B2Publication Date: 2013-02-05
- Inventor: Toshiyuki Okayasu , Daisuke Watanabe
- Applicant: Toshiyuki Okayasu , Daisuke Watanabe
- Applicant Address: JP Tokyo
- Assignee: Advantest Corporation
- Current Assignee: Advantest Corporation
- Current Assignee Address: JP Tokyo
- Main IPC: G11C13/00
- IPC: G11C13/00
Abstract:
A memory device to which an electron beam is irradiated to store data therein is provided. The memory device includes a plurality of floating electrodes that store data through irradiation of the electron beam thereto, a charge amount detecting section that detects data stored in each of the floating electrodes based on a charge amount accumulated in each of the floating electrode.
Public/Granted literature
- US20110242895A1 MEMORY DEVICE, MANUFACTURING METHOD FOR MEMORY DEVICE AND METHOD FOR DATA WRITING Public/Granted day:2011-10-06
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