A memory circuit comprising a set of longitudinal conducting lines and a set of transverse conducting lines, wherein, each conducting line comprises alternating regions of reduced and increased line widths. The set of transverse conducting lines overlies the set of longitudinal conducting lines to define crossover zones wherein the reduced line width regions of the transverse conducting lines cross over the reduced line width regions of the longitudinal conducting lines. The circuit further comprises addressable magnetic storage elements, each disposed within a crossover zone between a longitudinal conducting line and a transverse conducting line thereof. The reduced line width regions improve magnetic flux efficiency in the magnetic storage elements and the increased line width regions lower the resistance in the conducting lines.