Invention Grant
- Patent Title: Non-volatile memory with resistive access component
- Patent Title (中): 具有电阻性访问组件的非易失性存储器
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Application No.: US13158794Application Date: 2011-06-13
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Publication No.: US08369139B2Publication Date: 2013-02-05
- Inventor: Jun Liu , Michael P. Violette
- Applicant: Jun Liu , Michael P. Violette
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Some embodiments include apparatus and methods having a memory element configured to store information and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon.
Public/Granted literature
- US20110233504A1 NON-VOLATILE MEMORY WITH RESISTIVE ACCESS COMPONENT Public/Granted day:2011-09-29
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