Invention Grant
- Patent Title: Memory device for reducing programming time
- Patent Title (中): 用于减少编程时间的存储器
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Application No.: US12839364Application Date: 2010-07-19
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Publication No.: US08369163B2Publication Date: 2013-02-05
- Inventor: Sang Hyun Song
- Applicant: Sang Hyun Song
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Ltd.
- Priority: KR10-2009-0130727 20091224
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F13/00
Abstract:
A non-volatile memory device includes: first and second planes each comprising a plurality of non-volatile memory cells; first and second buffer corresponding to the first and second planes, respectively; an input/output control unit configured to selectively control input/output paths of data stored in the first and second page buffers; a flash interface connected to the input/output control unit; and a host connected to the flash interface.
Public/Granted literature
- US20110161567A1 MEMORY DEVICE FOR REDUCING PROGRAMMING TIME Public/Granted day:2011-06-30
Information query
