Invention Grant
US08369169B2 Sense amplifier and semiconductor memory device including the same
失效
感应放大器和包括其的半导体存储器件
- Patent Title: Sense amplifier and semiconductor memory device including the same
- Patent Title (中): 感应放大器和包括其的半导体存储器件
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Application No.: US12642184Application Date: 2009-12-18
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Publication No.: US08369169B2Publication Date: 2013-02-05
- Inventor: Hyung-Sik Won
- Applicant: Hyung-Sik Won
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor, Inc.
- Current Assignee: Hynix Semiconductor, Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2009-0074016 20090811
- Main IPC: G11C7/02
- IPC: G11C7/02
Abstract:
A sense amplifier includes a first inverter having an input terminal connected to a first line and an output terminal connected to a second line, and a second inverter having an input terminal connected to the second line and an output terminal connected to the first line, wherein an NMOS transistor of the first inverter and an NMOS transistor of the second inverter have well biases different from each other.
Public/Granted literature
- US20110038220A1 SENSE AMPLIFIER AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2011-02-17
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