Invention Grant
- Patent Title: Semiconductor laser excited solid-state laser device
- Patent Title (中): 半导体激光激光固态激光器件
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Application No.: US12734624Application Date: 2008-03-28
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Publication No.: US08369366B2Publication Date: 2013-02-05
- Inventor: Koji Tojo , Naoya Ishigaki
- Applicant: Koji Tojo , Naoya Ishigaki
- Applicant Address: JP Kyoto
- Assignee: Shimadzu Corporation
- Current Assignee: Shimadzu Corporation
- Current Assignee Address: JP Kyoto
- Agency: Jordan and Hamburg LLP
- Priority: JP2008-014504 20080125
- International Application: PCT/JP2008/000789 WO 20080328
- International Announcement: WO2009/093289 WO 20090730
- Main IPC: H01S3/11
- IPC: H01S3/11

Abstract:
To make it possible to use a type I nonlinear optical crystal or a quasi phase matching element as a third harmonic generation crystal there is provided a semiconductor laser, a solid state laser medium that outputs a fundamental wave, a second harmonic generation crystal that outputs a second harmonic wave from the fundamental wave, and a third harmonic generation crystal that outputs a third harmonic wave from the fundamental wave and the second harmonic wave. A quasi phase matching elements is utilized as the second harmonic generation crystal. It is possible to use a type I nonlinear optical crystal or a quasi phase matching element as the third harmonic generation crystal.
Public/Granted literature
- US20100254413A1 SEMICONDUCTOR LASER EXCITED SOLID-STATE LASER DEVICE Public/Granted day:2010-10-07
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