Invention Grant
US08369366B2 Semiconductor laser excited solid-state laser device 有权
半导体激光激光固态激光器件

  • Patent Title: Semiconductor laser excited solid-state laser device
  • Patent Title (中): 半导体激光激光固态激光器件
  • Application No.: US12734624
    Application Date: 2008-03-28
  • Publication No.: US08369366B2
    Publication Date: 2013-02-05
  • Inventor: Koji TojoNaoya Ishigaki
  • Applicant: Koji TojoNaoya Ishigaki
  • Applicant Address: JP Kyoto
  • Assignee: Shimadzu Corporation
  • Current Assignee: Shimadzu Corporation
  • Current Assignee Address: JP Kyoto
  • Agency: Jordan and Hamburg LLP
  • Priority: JP2008-014504 20080125
  • International Application: PCT/JP2008/000789 WO 20080328
  • International Announcement: WO2009/093289 WO 20090730
  • Main IPC: H01S3/11
  • IPC: H01S3/11
Semiconductor laser excited solid-state laser device
Abstract:
To make it possible to use a type I nonlinear optical crystal or a quasi phase matching element as a third harmonic generation crystal there is provided a semiconductor laser, a solid state laser medium that outputs a fundamental wave, a second harmonic generation crystal that outputs a second harmonic wave from the fundamental wave, and a third harmonic generation crystal that outputs a third harmonic wave from the fundamental wave and the second harmonic wave. A quasi phase matching elements is utilized as the second harmonic generation crystal. It is possible to use a type I nonlinear optical crystal or a quasi phase matching element as the third harmonic generation crystal.
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