Invention Grant
- Patent Title: Optical modulators employing charge state control of deep levels
- Patent Title (中): 采用深层电荷状态控制的光调制器
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Application No.: US12839739Application Date: 2010-07-20
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Publication No.: US08369658B2Publication Date: 2013-02-05
- Inventor: Andrew P. Knights , Gregory L. Wojcik , Andreas Goebel , Dylan F. Logan , Paul E. Jessop
- Applicant: Andrew P. Knights , Gregory L. Wojcik , Andreas Goebel , Dylan F. Logan , Paul E. Jessop
- Agency: Wilmer Cutler Pickering Hale & Dorr LLP
- Main IPC: G02F1/035
- IPC: G02F1/035

Abstract:
A method involving: providing an optical waveguide made of a semiconductor material and having a region that is doped by a deep level impurity which creates deep level states in a bandgap in the semiconductor material, the deep level states characterized by an occupancy; passing an optical signal through the optical waveguide and between the region doped by the deep level impurity; and modulating the occupancy of the deep level states to thereby modulate the optical signal.
Public/Granted literature
- US20110091146A1 OPTICAL MODULATORS EMPLOYING CHARGE STATE CONTROL OF DEEP LEVELS Public/Granted day:2011-04-21
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