Invention Grant
US08370557B2 Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory
有权
伪双端口SRAM和使用多个存储体和边带存储器的共享存储器开关
- Patent Title: Pseudo dual-port SRAM and a shared memory switch using multiple memory banks and a sideband memory
- Patent Title (中): 伪双端口SRAM和使用多个存储体和边带存储器的共享存储器开关
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Application No.: US12340022Application Date: 2008-12-19
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Publication No.: US08370557B2Publication Date: 2013-02-05
- Inventor: Jonathan Dama , Andrew Lines
- Applicant: Jonathan Dama , Andrew Lines
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G06F13/00
- IPC: G06F13/00 ; G06F12/00 ; G11C11/413
Abstract:
A memory is described which includes a main memory array made up of multiple single-ported memory banks connected by parallel read and write buses, and a sideband memory equivalent to a single dual-ported memory bank. Control logic and tags state facilitates a pattern of access to the main memory and the sideband memory such that the memory performs like a fully provisioned dual-ported memory capable of reading and writing any two arbitrary addresses on the same cycle.
Public/Granted literature
- US20100161892A1 PSEUDO DUAL-PORTED SRAM Public/Granted day:2010-06-24
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