Invention Grant
- Patent Title: Susceptor device, manufacturing apparatus of epitaxial wafer, and manufacturing method of epitaxial wafer
- Patent Title (中): 受体器件,外延晶片的制造装置以及外延晶片的制造方法
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Application No.: US12610708Application Date: 2009-11-02
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Publication No.: US08372196B2Publication Date: 2013-02-12
- Inventor: Motonori Nakamura , Yoshinobu Mori , Takeshi Masuda , Hidenori Kobayashi , Kazuhiro Narahara
- Applicant: Motonori Nakamura , Yoshinobu Mori , Takeshi Masuda , Hidenori Kobayashi , Kazuhiro Narahara
- Applicant Address: JP Nagasaki
- Assignee: Sumco Techxiv Corporation
- Current Assignee: Sumco Techxiv Corporation
- Current Assignee Address: JP Nagasaki
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-283182 20081104; JP2008-283183 20081104
- Main IPC: C30B21/02
- IPC: C30B21/02

Abstract:
In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.
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