Invention Grant
- Patent Title: Bulk GaN and AlGaN single crystals
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Application No.: US12141944Application Date: 2008-06-19
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Publication No.: US08372199B2Publication Date: 2013-02-12
- Inventor: Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
- Applicant: Yuri V. Melnik , Vitali Soukhoveev , Vladimir Ivantsov , Katie Tsvetkov , Vladimir A. Dmitriev
- Applicant Address: DE Freiberg
- Assignee: Freiberger Compound Materials GmbH
- Current Assignee: Freiberger Compound Materials GmbH
- Current Assignee Address: DE Freiberg
- Agency: A.C. Entis-IP Ltd.
- Main IPC: C30B21/02
- IPC: C30B21/02
Abstract:
Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.
Public/Granted literature
- US20080257256A1 BULK GaN AND AlGaN SINGLE CRYSTALS Public/Granted day:2008-10-23
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