Invention Grant
US08372200B2 Shower plate, method for manufacturing the shower plate, plasma processing apparatus using the shower plate, plasma processing method and electronic device manufacturing method
有权
淋浴板，淋浴板的制造方法，使用淋浴板的等离子体处理装置，等离子体处理方法和电子装置的制造方法
- Patent Title: Shower plate, method for manufacturing the shower plate, plasma processing apparatus using the shower plate, plasma processing method and electronic device manufacturing method
- Patent Title (中): 淋浴板，淋浴板的制造方法，使用淋浴板的等离子体处理装置，等离子体处理方法和电子装置的制造方法
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Application No.: US12308333Application Date: 2007-06-13
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Publication No.: US08372200B2Publication Date: 2013-02-12
- Inventor: Masahiro Okesaku , Tetsuya Goto , Tadahiro Ohmi , Kiyotaka Ishibashi
- Applicant: Masahiro Okesaku , Tetsuya Goto , Tadahiro Ohmi , Kiyotaka Ishibashi
- Applicant Address: JP Tokyo JP Miyagi
- Assignee: Tokyo Electron Ltd.,National University Corporation Tohoku University
- Current Assignee: Tokyo Electron Ltd.,National University Corporation Tohoku University
- Current Assignee Address: JP Tokyo JP Miyagi
- Agency: Pearne & Gordon LLP
- Priority: JP2006-163357 20060613; JP2006-198754 20060720; JP2007-153563 20070611
- International Application: PCT/JP2007/061857 WO 20070613
- International Announcement: WO2007/145229 WO 20071221
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/00 ; H01L21/3065
Abstract:
Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 μm or lower.
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