Invention Grant
- Patent Title: Film deposition apparatus
- Patent Title (中): 膜沉积装置
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Application No.: US12539633Application Date: 2009-08-12
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Publication No.: US08372202B2Publication Date: 2013-02-12
- Inventor: Hitoshi Kato , Manabu Honma
- Applicant: Hitoshi Kato , Manabu Honma
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: IPUSA, PLLC
- Priority: JP2008-222733 20080829
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/00

Abstract:
A disclosed film deposition apparatus includes a turntable including a substrate receiving area; a first reaction gas supplier for supplying a first reaction gas to a surface of the turntable having the substrate receiving area; a second reaction gas supplier, arranged away from the first reaction gas supplier along a circumferential direction of the turntable, for supplying a second reaction gas to the surface; a separation area located along the circumferential direction between a first process area of the first reaction gas and a second process area of the second reaction gas; a separation gas supplier for supplying a first separation gas to both sides of the separation area; a first heating unit for heating the first separation gas to the separation gas supplier; an evacuation opening for evacuating the gases supplied to the turntable; and a driver for rotating the turntable in the circumferential direction.
Public/Granted literature
- US20100055314A1 FILM DEPOSITION APPARATUS, FILM DEPOSITION METHOD, AND STORAGE MEDIUM Public/Granted day:2010-03-04
Information query
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