Invention Grant
- Patent Title: Susceptor for MOCVD reactor
- Patent Title (中): MOCVD反应器的受体
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Application No.: US11483387Application Date: 2006-07-06
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Publication No.: US08372204B2Publication Date: 2013-02-12
- Inventor: Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
- Applicant: Shuji Nakamura , Steven DenBaars , Max Batres , Michael Coulter
- Applicant Address: US CA Goleta
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US CA Goleta
- Agency: Koppel, Patrick, Heybl & Philpott
- Main IPC: H01L21/00
- IPC: H01L21/00 ; C23C14/00 ; C23C16/00
Abstract:
A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.
Public/Granted literature
- US20060269390A1 Susceptor for MOCVD reactor Public/Granted day:2006-11-30
Information query
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