Invention Grant
- Patent Title: Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method
- Patent Title (中): 自组装结构的扩展通过自举模板方法增加尺寸
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Application No.: US11738169Application Date: 2007-04-20
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Publication No.: US08372295B2Publication Date: 2013-02-12
- Inventor: Dan B. Millward
- Applicant: Dan B. Millward
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L21/302
- IPC: H01L21/302 ; B82Y40/00
Abstract:
Methods for fabricating sublithographic, nanoscale arrays of openings and linear microchannels utilizing self-assembling block copolymers, and films and devices formed from these methods are provided. Embodiments of the invention use a self-templating or multilayer approach to induce ordering of a self-assembling block copolymer film to an underlying base film to produce a multilayered film having an ordered array of nanostructures that can be removed to provide openings in the film which, in some embodiments, can be used as a template or mask to etch openings in an underlying material layer.
Public/Granted literature
- US08123961B2 Extensions of self-assembled structures to increased dimensions via a “bootstrap” self-templating method Public/Granted day:2012-02-28
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