Invention Grant
- Patent Title: Clean bench and method of producing raw material for single crystal silicon
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Application No.: US13067439Application Date: 2011-06-01
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Publication No.: US08372372B2Publication Date: 2013-02-12
- Inventor: Kazuhiro Sakai , Yukiyasu Miyata
- Applicant: Kazuhiro Sakai , Yukiyasu Miyata
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Materials Corporation
- Current Assignee: Mitsubishi Materials Corporation
- Current Assignee Address: JP Tokyo
- Agency: Edwards Wildman Palmer LLP
- Priority: JP2007-229211 20070904; JP2008-168497 20080627
- Main IPC: C01B33/02
- IPC: C01B33/02

Abstract:
A clean bench comprising a worktable on which polycrystalline silicon is placed, a box part which includes side plates to surround three sides except a front face of a working space above the worktable, and a ceiling plate which covers an upper side of the working space. Supplying holes are formed in the ceiling plate of the box part, which supply clean air onto an upper surface of the worktable. An ionizer is provided, which ionizes the clean air supplied from the supplying holes to the working space and removes static electricity on the worktable. Suction holes are formed in the side plate of the box part, which suction air from the working space.
Public/Granted literature
- US20110236292A1 Clean bench and method of producing raw material for single crystal silicon Public/Granted day:2011-09-29
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