Invention Grant
- Patent Title: Cobalt precursors for semiconductor applications
- Patent Title (中): 用于半导体应用的钴前体
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Application No.: US12124376Application Date: 2008-05-21
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Publication No.: US08372473B2Publication Date: 2013-02-12
- Inventor: Christian Dussarrat
- Applicant: Christian Dussarrat
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide Societe Anonyme pour l'Etude et l'Exploitation des Procedes Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
Methods and compositions for depositing a cobalt containing film on one or more substrates are disclosed herein. A cobalt precursor, which comprises at least one pentadienyl ligand coupled to the cobalt for thermal stability, is introduced into a reaction chamber containing one or more substrates, and the cobalt precursor is deposited to form a cobalt containing film onto the substrate.
Public/Granted literature
- US20090029036A1 COBALT PRECURSORS FOR SEMICONDUCTOR APPLICATIONS Public/Granted day:2009-01-29
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