Invention Grant
- Patent Title: Methods for forming thin films comprising tellurium
- Patent Title (中): 用于形成包含碲的薄膜的方法
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Application No.: US12163757Application Date: 2008-06-27
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Publication No.: US08372483B2Publication Date: 2013-02-12
- Inventor: Viljami Pore , Timo Hatanpää , Mikko Ritala , Markku Leskelä
- Applicant: Viljami Pore , Timo Hatanpää , Mikko Ritala , Markku Leskelä
- Applicant Address: NL
- Assignee: ASM International N.V.
- Current Assignee: ASM International N.V.
- Current Assignee Address: NL
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: C23C16/06
- IPC: C23C16/06
Abstract:
Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI3 replaces the zinc, thereby forming Sb2Te3 thin films. Ge—Te and Ge—Sb—Te films can also be made by providing Ge sources to ZnTe and Sb—Te thin films, respectively.
Public/Granted literature
- US20090324821A1 METHODS FOR FORMING THIN FILMS COMPRISING TELLURIUM Public/Granted day:2009-12-31
Information query
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