Invention Grant
- Patent Title: Nonvolatile ferroelectric perpendicular electrode cell, FeRAM having the cell and method for manufacturing the cell
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Application No.: US12430803Application Date: 2009-04-27
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Publication No.: US08372662B2Publication Date: 2013-02-12
- Inventor: Hee Bok Kang
- Applicant: Hee Bok Kang
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: KR10-2004-0028291 20040423
- Main IPC: H01L21/8246
- IPC: H01L21/8246

Abstract:
A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode as a first electrode and a storage perpendicular electrode as a second electrode apart at a predetermined interval from the word line perpendicular electrode to have a column type, where a ferroelectric material is filled in a space where the first electrode are separated from the second electrode. The serial PN diode switch, which is connected between a bit line and the ferroelectric capacitor, selectively switches a current direction between the bit line and the ferroelectric capacitor depending on voltage change between the bit line and the ferroelectric capacitor.
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Information query
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