Invention Grant
- Patent Title: Light-emitting device and method for manufacturing the same
- Patent Title (中): 发光装置及其制造方法
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Application No.: US12729487Application Date: 2010-03-23
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Publication No.: US08372668B2Publication Date: 2013-02-12
- Inventor: Kaoru Hatano , Takaaki Nagata , Takuya Tsurume
- Applicant: Kaoru Hatano , Takaaki Nagata , Takuya Tsurume
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2009-075989 20090326
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
In a manufacturing method of a light-emitting device, a separation layer is formed over a substrate; a semiconductor circuit element layer and first electrodes are formed over the separation layer; a partition wall overlapping with end portions of the first electrodes is formed; and organic material layers are formed over the first electrodes. Organic material layers emitting light of the same color are arranged adjacent to each other in a line and extend in a first direction. A second electrode is formed using a material having high adhesiveness to the partition wall over the organic material layers to be in contact with the partition wall. A stack structure including the semiconductor circuit element layer, the first electrodes, the partition wall, the organic material layers, and the second electrode is separated from the substrate using the separation layer in a second direction perpendicular to the first direction.
Public/Granted literature
- US20100248403A1 Light-Emitting Device and Method for Manufacturing the Same Public/Granted day:2010-09-30
Information query
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