Invention Grant
- Patent Title: Method for forming Ge-Sb-Te film and storage medium
- Patent Title (中): Ge-Sb-Te薄膜和储存介质的形成方法
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Application No.: US13376749Application Date: 2010-06-02
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Publication No.: US08372688B2Publication Date: 2013-02-12
- Inventor: Yumiko Kawano , Susumu Arima
- Applicant: Yumiko Kawano , Susumu Arima
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2009-138274 20090609
- International Application: PCT/JP2010/059337 WO 20100602
- International Announcement: WO2010/143570 WO 20101216
- Main IPC: H01L21/06
- IPC: H01L21/06
Abstract:
A film-forming method includes a preprocessing step (step 1) wherein the inside of a processing chamber is exposed to a gas containing Cl and/or F in a state having no substrate in the processing chamber, and a step (step 2) wherein a substrate is loaded into the processing chamber after the step 1. Then, in a step 3, a gaseous Ge raw material, a gaseous Sb raw material, and a gaseous Te raw material are introduced into the processing chamber having the substrate loaded therein, and a Ge—Sb—Te film formed of Ge2Sb2Te5 is formed on the substrate by CVD.
Public/Granted literature
- US20120108005A1 METHOD FOR FORMING Ge-Sb-Te FILM AND STORAGE MEDIUM Public/Granted day:2012-05-03
Information query
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