Invention Grant
- Patent Title: SiP substrate
- Patent Title (中): SiP基板
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Application No.: US13005618Application Date: 2011-01-13
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Publication No.: US08372690B2Publication Date: 2013-02-12
- Inventor: Maria Clemens Y. Quinones , Ruben P. Madrid
- Applicant: Maria Clemens Y. Quinones , Ruben P. Madrid
- Applicant Address: US ME South Portland
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US ME South Portland
- Agency: Hiscock & Barclay, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Disclosed in this specification is a system-in-a-package substrate that includes an interconnect substrate for permitting finely pitched connections to be made to an integrated circuit. The interconnect substrate includes a central region on its upper surface for receiving the integrated circuit. The interconnect substrate also has interconnections that electrically connect the finely pitched contacts on the upper surface to larger pitched contacts on the lower surface. The larger pitched contacts connect to a conductive trace frame. The resulting assembly is encased in a molding compound along with a plurality of other devices which are configured to interact with one other through the conductive trace.
Public/Granted literature
- US20110133318A1 SiP SUBSTRATE Public/Granted day:2011-06-09
Information query
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