Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
-
Application No.: US12691818Application Date: 2010-01-22
-
Publication No.: US08372691B2Publication Date: 2013-02-12
- Inventor: Akinori Shiraishi
- Applicant: Akinori Shiraishi
- Applicant Address: JP Nagano
- Assignee: Shinko Electric Industries, Co., Ltd.
- Current Assignee: Shinko Electric Industries, Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Rankin, Hill & Clark LLP
- Priority: JP2009-012900 20090123
- Main IPC: H01L21/48
- IPC: H01L21/48

Abstract:
A method of manufacturing a semiconductor device, includes the steps of: (a) providing a support including a plane having a first region for mounting a chip thereon and a second region provided around the first region; (b) forming an insulating resin layer in a semi-curing state on the plane; (c) forming, on the insulating resin layer, a first opening portion for exposing the first region; (d) fitting a chip in the first opening portion to mount the chip on the first region; and (e) completely curing the insulating resin layer after the step (d).
Public/Granted literature
- US20100190295A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-07-29
Information query
IPC分类: