Invention Grant
- Patent Title: Semiconductor device having a modified recess channel gate and a method for fabricating the same
- Patent Title (中): 具有修改的凹槽通道栅极的半导体器件及其制造方法
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Application No.: US13046828Application Date: 2011-03-14
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Publication No.: US08372698B2Publication Date: 2013-02-12
- Inventor: Tae Kyun Kim
- Applicant: Tae Kyun Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Marshall, Gerstein & Borun LLP
- Priority: KR10-2006-0137134 20061228
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A semiconductor device having a modified recess channel gate includes active regions defined by a device isolation layer and arranged at regular intervals on a semiconductor substrate, each active region extending in a major axis and a minor axis direction, a trench formed in each active region, the trench including a stepped bottom surface in the minor axis direction of the active region, and a recess gate formed in the trench.
Public/Granted literature
- US20110165768A1 Semiconductor Device Having a Modified Recess Channel Gate and a Method for Fabricating the Same Public/Granted day:2011-07-07
Information query
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