Manufacturing method of semiconductor device and semiconductor device

Invention Grant

US08372718B2 Manufacturing method of semiconductor device and semiconductor device 有权

Title translation: 半导体器件和半导体器件的制造方法

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Patent Title: Manufacturing method of semiconductor device and semiconductor device
Patent Title (中): 半导体器件和半导体器件的制造方法
Application No.: US13607804

Application Date: 2012-09-10
Publication No.: US08372718B2

Publication Date: 2013-02-12
Inventor: Yasuhiro Fujii , Kazumasa Yonekura , Tatsunori Kaneoka
Applicant: Yasuhiro Fujii , Kazumasa Yonekura , Tatsunori Kaneoka
Applicant Address: JP Kawasaki-shi
Assignee: Renesas Electronics Corporation
Current Assignee: Renesas Electronics Corporation
Current Assignee Address: JP Kawasaki-shi
Agency: Miles & Stockbridge P.C.
Priority: JP2009-027360 20090209
Main IPC: H01L21/8234
IPC: H01L21/8234

Manufacturing method of semiconductor device and semiconductor device

Abstract:

An improvement is provided in a manufacturing yield of a semiconductor device including transistors in which gate insulating films have different thicknesses. After a high-breakdown-voltage insulating film is formed over a silicon substrate, a surface of the high-breakdown-voltage insulating film is abraded for a reduction in the thickness thereof so that a middle-breakdown-voltage insulating film is formed to be adjacent to the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed by a thermal oxidation method so as to extend from an inside of the main surface of the silicon substrate to an outside thereof. The middle-breakdown-voltage insulating film is formed so as to be thinner than the high-breakdown-voltage insulating film. The high-breakdown-voltage insulating film is formed as the gate insulating film of a high-breakdown-voltage MIS transistor, while the middle-breakdown-voltage insulating film is formed as the gate insulating film of a middle-breakdown-voltage MIS transistor.

Abstract(Chinese):

提供一种半导体器件的制造成品率的提高，该半导体器件包括其中栅绝缘膜具有不同厚度的晶体管。在硅衬底上形成高耐压绝缘膜之后，高耐压绝缘膜的表面被磨损以减小其厚度，使得中间击穿电压绝缘膜形成为邻近高耐压绝缘膜。高耐压绝缘膜通过热氧化法形成，以从硅衬底的主表面的内部延伸到其外部。中间击穿电压绝缘膜形成为比高击穿电压绝缘膜薄。高击穿电压绝缘膜形成为高击穿电压MIS晶体管的栅极绝缘膜，而中间击穿电压绝缘膜形成为中间击穿电压MIS晶体管的栅极绝缘膜。

Public/Granted literature

US20120329240A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2012-12-27

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺