Invention Grant
- Patent Title: Work function engineering for eDRAM MOSFETs
- Patent Title (中): eDRAM MOSFET的工作功能工程
-
Application No.: US13343850Application Date: 2012-01-05
-
Publication No.: US08372721B2Publication Date: 2013-02-12
- Inventor: Xiangdong Chen , Herbert L. Ho , Geng Wang
- Applicant: Xiangdong Chen , Herbert L. Ho , Geng Wang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Howard M. Cohn; Joseph Petrokaitis; Matthew C. Zehrer
- Main IPC: H01L21/336
- IPC: H01L21/336

Abstract:
Embedded DRAM MOSFETs including an array NFET having a gate stack comprising a high-K dielectric layer upon which is deposited a first metal oxide layer (CD1) then a conductive layer (TiN), and then a polysilicon layer (Poly). A logic PFET having substantially the same gate stack as the array NFET, and a logic NFET having a third gate stack comprising the high-K dielectric layer upon which is deposited the conductive layer (TiN) and then the polysilicon layer (Poly), without the first metal oxide layer (CD1) between the high-K dielectric layer and the conductive layer (TiN). The array NFET may therefore have a higher gate stack work function than the logic NFET, but substantially the same gate stack work function as the logic PFET.
Public/Granted literature
- US20120108050A1 WORK FUNCTION ENGINEERING FOR EDRAM MOSFETS Public/Granted day:2012-05-03
Information query
IPC分类: